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APT8018L2VFR
800V 43A
0.180
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
L2VFR
TO-264 Max
* TO-264 MAX Package * Faster Switching * Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* Avalanche Energy Rated * FAST RECOVERY BODY DIODE
G S D
All Ratings: TC = 25C unless otherwise specified.
APT8018L2VFR UNIT Volts Amps
800 43 172 30 40 833 6.67 -55 to 150 300 43 50
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.180 250 1000 100 2 4
(VGS = 10V, ID = 21.5A)
Ohms A nA Volts
5-2004 050-7252 Rev A
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT8018L2VFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 43A @ 25C VGS = 15V VDD = 400V ID = 43A @ 25C RG = 0.6 MIN TYP MAX UNIT
10700 1180 610 610 60 360 19 17 80 12
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
43 172 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -43A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -43A, di/dt = 100A/s) Reverse Recovery Charge (IS = -43A, di/dt = 100A/s) Peak Recovery Current (IS = -43A, di/dt = 100A/s)
300 600 2.0 6.0 15.5 27
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.15 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 3.46mH, RG = 25, Peak IL = 43A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID43A di/dt 700A/s VR 800V TJ 150C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
, THERMAL IMPEDANCE (C/W)
0.9 0.12 0.7
0.08
0.5
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
5-2004
0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE
050-7252 Rev A
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
120 100 80 60 VGS =15 &10V
APT8018L2VFR
6V
RC MODEL Junction temp. (C) 0.0545 Power (watts) 0.0957 Case temperature. (C) 0.922F 0.0487F
5.5V
5V 40 20 0 4.5V 4V 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
120 100 80 60 TJ = -55C 40 TJ = +25C 20 TJ = +125C 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ 21.5A
ID, DRAIN CURRENT (AMPERES)
1.30 1.20 1.10 1.00 0.90 0.80 VGS=20V
VGS=10V
0
50
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
40
1.10
30
1.05
20
1.00
10
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0 25
0.90 -50
2.5
I
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 21.5A = 10V
V
GS
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-25
050-7252 Rev A
5-2004
172 100
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000 100S
C, CAPACITANCE (pF)
APT8018L2VFR
Ciss
50
10,000
10
1mS
1,000
Coss Crss
1
TC =+25C TJ =+150C SINGLE PULSE
10mS
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 43A
200 100 TJ =+150C TJ =+25C
12 VDS=160V 8 VDS=400V 4
10
VDS=640V
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 MAXTM(L2) Package Outline (L2VFR)
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106)
2.29 (.090) 2.69 (.106)
5-2004
19.81 (.780) 21.39 (.842)
Gate Drain Source
050-7252 Rev A
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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